TY - JOUR T1 - Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates JO - J ELECTRON MATER PY - 2003/05/01 AU - Tan WS AU - Houston PA AU - Hill G AU - Airey RJ AU - Parbook PJ ED - VL - 32 IS - 5 SP - 350 EP - 354 Y2 - 2025/04/30 ER -