TY - CONF T1 - A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure JO - Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. PY - 1990/12/01 AU - Huang Q AU - Sankara Narayanan EM AU - Kwan KW AU - Amaratunga G AU - Milne WI ED - DO - DOI: 10.1109/ispsd.1990.991068 PB - IEEE Y2 - 2025/04/30 ER -