@inproceedings{inproceedings, title = {{2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate}}, publisher = {{IEEE}}, url = {{}}, year = {{2014}}, month = {{1}}, author = {{Unni V and Long H and Sweet M and Balachandran A and Narayanan EMS and Nakajima A and Kawai H}}, doi = {{10.1109/ispsd.2014.6856022}}, isbn = {{9781479929177}}, journal = {{2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)}}, note = {{Accessed on 2025/05/03}}}