TY - JOUR T1 - Absorption properties of GaAsBi based p鈥搃鈥搉 heterojunction diodes JO - Semiconductor Science and Technology PY - 2015/09/01 AU - Zhou Z AU - Mendes DF AU - Richards RD AU - Bastiman F AU - David JPR ED - DO - DOI: 10.1088/0268-1242/30/9/094004 PB - IOP Publishing VL - 30 IS - 9 SP - 094004 EP - 094004 Y2 - 2025/04/29 ER -