TY - JOUR T1 - 1.3 mu m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature JO - ELECTRON LETT PY - 2006/08/03 AU - Badcock TJ AU - Liu HY AU - Groom KM AU - Jin CY AU - Gutierrez M AU - Hopkinson M AU - Mowbray DJ AU - Skolnick MS ED - DO - DOI: 10.1049/el:20061487 VL - 42 IS - 16 SP - 922 EP - 923 Y2 - 2025/04/30 ER -